november 2013 FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 1 absolute maximum ratings t c = 25 o c unless otherwise noted . *drain current limited by maximum junction temperature. thermal characteristics symbol parameter FCPF400N80Z unit v dss drain to source voltage 800 v v gss gate to source voltage - dc 20 v - ac (f >1 hz) 30 i d drain current - continuous (t c = 25 o c) 11* a - continuous (t c = 100 o c) 4.1* i dm drain current - pulsed (note 1) 33* a e as single pulsed avalanche energy (note 2) 339 mj i ar avalanche current (note 1) 2.2 a e ar repetitive avalanche energy (note 1) 0.36 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 35.7 w - derate above 25 o c0.29w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCPF400N80Z unit r jc thermal resistance, junction to case, max. 3.5 o c/w r ja thermal resistance, junction to ambient, max. 62.5 FCPF400N80Z n-channel superfet ? ii mosfet 800 v, 11 a, 400 m features ?typ. r ds(on) = 340 m ? ultra low gate charge (typ. q g = 43 nc) ? low e oss (typ. 4.1 uj @ 400 v) ? low effective output capacitance (typ. c oss(eff.) = 138 pf) ? 100% avalanche tested ? rohs compliant ? esd improved capability applications ? ac-dc power supply ? led lighting description superfet ? ii mosfet is fairchild semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss, pr ovide superior switching perfor- mance, dv/dt rate and higher avalanche energy. in addition, internal gate-source esd diode allows to withstand over 2kv hbm surge stress. consequently, superfet ii mosfet is very suitable for the switching power applications such as audio, laptop adapter, lighting, atx power and industrial power appli- cations. to-220f g d s g d s
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics part number top mark package packing method reel size tape width quantity FCPF400N80Z FCPF400N80Z to-220f tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 1 ma, t j = 25 c 800 - - v bv dss / t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c-0.8-v/ o c i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v - - 25 a v ds = 640 v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 1.1 ma 2.5 - 4.5 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 5.5 a - 0.34 0.4 g fs forward transconductance v ds = 20 v, i d = 5.5 a -12-s c iss input capacitance v ds = 100 v, v gs = 0 v, f = 1 mhz - 1770 2350 pf c oss output capacitance - 51 70 pf c rss reverse transfer capacitance - 0.5 - pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1 mhz - 28 - pf c oss(eff.) effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 138 - pf q g(tot) total gate charge at 10v v ds = 640 v, i d = 11 a, v gs = 10 v (note 4) -4356nc q gs gate to source gate charge - 8.6 - nc q gd gate to drain ?miller? charge - 17 - nc esr equivalent series resistance f = 1 mhz - 2.3 - t d(on) turn-on delay time v dd = 400 v, i d = 11 a, v gs = 10 v, r g = 4.7 (note 4) -2050ns t r turn-on rise time - 12 34 ns t d(off) turn-off delay time - 51 112 ns t f turn-off fall time - 2.6 15 ns i s maximum continuous drain to source diode forward current - - 11 a i sm maximum pulsed drain to source diode forward current - - 33 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 11 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 11 a, di f /dt = 100 a/ s - 395 - ns q rr reverse recovery charge - 7.4 - c notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. i as = 2.2 a, v dd = 50 v, r g = 25 , starting t j = 25 c. 3. i sd 11 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 11020 2 10 50 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain cu rrent[a] v ds , drain to source voltage[v] v gs = 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 34567 1 10 50 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate tosource voltage[v] 0 6 12 18 24 30 35 0.2 0.3 0.4 0.5 0.6 0.7 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain to source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 50 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0153045 0 2 4 6 8 10 v ds = 640v v ds = 400v v ds = 160v *note: i d = 11a v gs , gate to source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain to source voltage [v]
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain to source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 5.5a r ds(on) , [normalized] drain to source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 100 s 10 s 1ms 10ms i d , drain current [a] v ds , drain to source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 200 400 600 800 0 2 4 6 8 10 12 e oss , [ j] v ds , drain to source voltage [v]
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec] 5 t 1 p dm t 2
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 6 figure 13. gate charge test circuit & waveform figure 14. resistive switch ing test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 7 figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCPF400N80Z ? n-channel superfet ? ii mosfet ?2013 fairchild semiconductor corporation FCPF400N80Z rev. c2 www.fairchildsemi.com 8 mechanical dimensions figure 17. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/ packagedetails.html?id=pn_tf22s-003
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